Accelerating the miniaturization of fast charging, 14 original factories launched 50 popular sealed gallium nitride (Gan) chips

PD 20W Mini Portable Charger

From the mass production of the first gallium nitride fast charging source to the current influx of hundreds of new gallium nitride products into the market, in just three years, the capacity of the entire gallium nitride fast charging source market has increased by a hundred times. In the past, only a few The gallium nitride technology that third-party accessory brands dare to try has now become a must-have product for first-line mobile phone and notebook brands, and we have to sigh the charm of technological iteration.

In the process of the continuous expansion of the GaN fast charging market, the level of power supply technology is also constantly improving. The initial GaN fast charging source generally requires a combination design of controller + driver + GaN power device, not only the circuit layout is more complicated, product development is relatively difficult, and the cost is relatively high. As a leading power chip manufacturer in the industry, based on the technical advantages of its power chips, PI took the lead in launching a highly integrated power chip with built-in gallium nitride power devices, and the concept of co-packaged gallium nitride chips was born.

In the following years, domestic power chip companies not only launched GaN controller chips, but most of the controllers also supported direct-drive GaN power devices. It is worth mentioning that many power chip manufacturers have made efforts in the field of co-packaged GaN chips, enriching the market of highly integrated GaN power chips, integrating PWM controllers, drivers and nitrogen into one chip. The gallium nitride power device greatly simplifies the circuit design of the power product development process and effectively reduces the BOM cost, which is conducive to promoting the popularization of gallium nitride fast charging technology.

At present, more than ten power chip manufacturers on the market have deployed co-packaged gallium nitride chips, and will also welcome Dongke, Maoruixin, Nanxin, Biyiwei, Jiehuate, Yutai, Messi Semiconductor, Lithium 14 well-known power chip manufacturers in the industry, including Shengmei, Xisuwei, PI, Universal Semiconductor, Yancheng Microelectronics, Huayuan, and Chuangxinwei, shared and demonstrated the latest co-packaged gallium nitride chip technology and supporting power solutions.

Dongke Semiconductor (Anhui) Co., Ltd.

Dongke Semiconductor is the first domestic chip manufacturer to launch co-packaged gallium nitride power chips. In August 2020, it officially released 45W co-packaged gallium nitride chips. Since then, it has successively launched co-packaged 25W, 36W, 65W and other power segments. Gallium nitride chips, so far, Dongke’s co-packaged gallium nitride chip product line has 5 products, of which 65W co-packaged gallium nitride chips also have two options: QR flyback architecture and active clamp architecture.

The DK025G launched by Dongke is a highly integrated QR flyback packaged GaN chip. The chip integrates a 650V 800mΩ GaN switch, a controller, a driver, a high-voltage start-up circuit and a protection unit. The 130KHz switching frequency can effectively reduce the transformer volume of the charger and achieve a balance between performance and cost. DK025G has built-in overheating, overcurrent, overvoltage, output short circuit, and secondary open circuit protection functions. It adopts ESOP8 package and can dissipate heat through PCB copper foil, simplifying heat dissipation requirements and reducing temperature rise.

The DK036G launched by Dongke is a highly integrated QR flyback packaged GaN chip. The chip integrates a 650V 400mΩ GaN switch, a controller, a driver, a high-voltage start-up circuit and a protection unit. The 130KHz switching frequency can effectively reduce the transformer volume of the charger and achieve a balance between performance and cost. DK036G has built-in overheating, overcurrent, overvoltage and output short circuit, secondary open circuit protection functions. It adopts ESOP8 and PDFN5×6 package forms, which can dissipate heat through PCB copper foil, simplifying heat dissipation requirements and reducing temperature rise.

Dongke DK045G is a highly integrated 650V/400mΩ GaN HEMT quasi-resonant flyback control AC-DC power switch chip. The DK045G detects the voltage (VDS) between the drain and source of the power transistor, and turns on the power transistor when VDS reaches its minimum value, thereby reducing switching losses and improving electromagnetic interference (EMI).

The DK045G greatly simplifies the design and manufacture of flyback AC-DC converters, especially those requiring high conversion efficiency and high power density. DK045G has complete protection functions: output over voltage protection (OVP), VCC over and under voltage protection, over temperature protection (OTP), open loop protection, output over current protection (OCP), etc.

Maoruixin (Shenzhen) Technology Co., Ltd.

For the application of high-integrated GaN fast charging, Moraycore has launched co-packaged GaN chips MK2787 and MK2788. The two chips have the same functions and both support the application of 33W GaN fast charging. They use different ESOP-8 and DFN5x6 package to meet the application requirements of different products. In addition, Procore has also launched products such as GaN direct drive controllers and supporting high-frequency synchronous rectifier controllers, providing a complete solution for the development of GaN fast charging.

Committed to providing customers with optimal solutions, further improving the power density of PD fast charging, and improving the reliability of GaN systems, Moray Core has launched a 33W integrated gallium nitride PD solution MK2787/MK2788, an ACDC power switch with integrated GaN HEMT, MK2787 It adopts ESOP-8 package design, and MK2788 adopts DFN5x6 package design, which is convenient for customers to choose.

MK2787/MK2788 adopts the unique high-voltage technology in the industry-leading position of Moray core, the Vcc withstand voltage is up to 110V, and the PPS application does not need a voltage regulator circuit; it adopts the patented floppy drive technology, which effectively reduces the voltage stress of the synchronous rectifier; adopts high-frequency QR control technology to effectively reduce the size of the transformer.

Shanghai Nanxin Semiconductor Technology Co., Ltd.

Nanxin Semiconductor has launched 3 co-packaged GaN power supply chips, of which SC3050 and SC3056 are suitable for the design of gallium nitride fast charging power sources within 40W, and SC3057 is suitable for the design of 65W fast charging power sources. In addition, Nanxin has also launched a synchronous rectification controller and a protocol chip suitable for GaN fast charging, providing a complete set of solutions for customers to develop GaN fast charging.

It is worth mentioning that at present, Nanxin SC305x series co-packaged gallium nitride chips have been shipped in batches, and Nanxin has also become the first domestic co-packaged gallium nitride chip manufacturer to mass-produce.

Nanxin SC3050/SC3056 is a high frequency quasi-resonant flyback converter with high energy efficiency and high reliability. The converter has built-in high voltage start-up circuit, which can achieve ultra-low standby power consumption and ultra-fast start-up speed. The SC3050/SC3056 provide adaptive frequency foldback for high efficiency over the full load range. In QR and DCM modes, valley is turned on to improve efficiency. When there is no load, the chip operates in burst mode, reducing standby power consumption.

The Southchip SC3050/SC3056 integrates a 650V gallium nitride switch tube, as well as a high-voltage start-up circuit, a soft-start circuit, and a segmented power supply circuit for an ultra-wide output range. It has ultra-low operating current in burst and fault mode, the maximum operating frequency is 175KHz, supports frequency jittering to improve EMI performance, supports valley turn-on, and operates in burst mode in light load and no-load mode to reduce power consumption and improve efficiency.

Nanxin SC3056 has a built-in 0.36 ohm 650V gallium amide power device, which can support 30W~45W applications under a wide input range, providing a high-efficiency and small-volume solution for USB PD fast charging and switching power supply applications.

Southchip’s SC3057 co-packaged GaN chip integrates high-performance multi-mode flyback controller, GaN driver, GaN switch, power supply and protection circuits in a QFN6*8 package with enhanced heat dissipation. The number of peripheral components is greatly reduced, the PCBA area is reduced by more than 50%, and the influence of the parasitic parameters of the traditional driving traces on the high-frequency switch is eliminated, so that the performance of gallium nitride can be further exerted.

Nanxin SC3057 adopts the design of separate power traces and control traces to reduce the impact of high-frequency switches on the control loop, and optimizes the design of charger traces and electrical performance through optimized pad design, simplifying design and development. Nanxin SC3057 has a built-in 165mΩ GaN switch tube, supports 175KHz switching frequency, and supports X capacitor discharge.

Shenzhen Biyi Microelectronics Co., Ltd.

Biyiwei has launched two co-packaged gallium nitride chips KP22064 and KP22066, both of which are packaged in DFN8X8, and the bottom uses a heat dissipation PAD with an area of 90%. The two chips can be used for 30W gallium nitride fast charging and 65W gallium nitride respectively. The design of the fast charging source simplifies the peripheral circuit.

Biyiwei KP22064 co-packaged chip has built-in 0.4Ω conduction resistance GaN switch tube, adopts DFN8X8 package, and uses a heat dissipation PAD with an area of 90% at the bottom. The operating frequency can reach up to 500KHz, and it supports a maximum power output of 45W. It is suitable for 30W-45W GaN fast charging design.

Biyi Micro KP22066 integrates a 165mΩ resistance GaN switch, a flyback controller and a reliable drive circuit. The high-voltage start-up circuit is integrated inside the chip, which can shorten the start-up time and reduce standby power consumption. At the same time, the X capacitor discharge function is also integrated, which can further reduce standby power consumption. At the same time, it has built-in highly reliable gallium nitride driver, providing a stable 6.2V gate drive voltage.

Biyiwei KP22066 adopts the negative voltage current sampling technology, there is no sampling resistor in the drive circuit, the drive voltage will not be affected by the voltage drop of the current sampling resistor when it is turned on, and it is more efficient. The sealing technology further reduces the influence of parasitic parameters on the high frequency switch and improves the overall stability. KP22066 has three operating frequencies that can be configured through pins, supports 140kHz, 300kHz, 500kHz, supports 9-112V supply voltage, and is suitable for wide voltage output applications.

KP2206X has built-in peak current jitter function to optimize EMI, supports green mode and hiccup mode operation, integrates power supply under-voltage, over-voltage protection, integrated input under-voltage, over-voltage protection, integrated output over-voltage protection, cycle-by-cycle current limit, Overload protection, overcurrent protection, overheating protection, current sampling resistor open circuit protection and other protection measures.

It is worth mentioning that the KP2206X co-packaged chip also supports dual windings to power the chip, and has two power supply pins, which can switch the power supply winding taps according to the output voltage. When the output voltage range is wide and the output voltage is high, the chip can automatically switch to the low-voltage winding to supply power to reduce the loss of the chip itself. KP22066 adopts Biyiwei’s proprietary DFN8*8 package, which separates power traces and control traces, and adopts large-area heat dissipation PAD, which effectively reduces temperature rise and has excellent heat dissipation performance.

Jiehuat Microelectronics Co., Ltd.

Gewart has previously launched a QR architecture controller and an ACF architecture controller for the application of gallium nitride fast charging. In terms of high-power density fast charging, JWalter has also launched two co-packaged gallium nitride chips, JW1566A and JW1565, of which JW1566A can be used in gallium nitride fast charging products within 33W, and JW1565 can be used in 65W gallium nitride. Fast charging products to achieve a streamlined peripheral design.

JW1565 adopts 6mm*8mm WDFN package with highly integrated QR mode co-packaging gallium nitride chip. It integrates 650V, 260mΩ gallium nitride power devices inside, and the maximum operating frequency is 260kHz. QR control improves efficiency by reducing switching losses, and improves EMI performance through natural frequency variation, while also overcoming the inherent shortcomings of QR flyback by limiting the internal maximum frequency.

The Jewart JW1565 includes a HV pin for startup to eliminate traditional startup resistors and save power consumption in standby mode. Meet strict efficiency regulations. Additionally, when the AC input is removed, the HV pin is used to discharge the X-capacitor, which helps reduce X-capacitor electrical losses and achieve extremely low standby power consumption.

JW1566A, a co-packaged GaN chip, integrates a flyback controller, a GaN driver and a GaN power transistor in the DFN5*6 package. The quasi-resonant flyback can reduce switching losses, improve EMI, and improve efficiency.

JW1566A has built-in 650V withstand voltage, 480mΩ GaN switch tube, the chip supports up to 90V power supply voltage, the highest switching frequency can reach 260kHz, built-in high-voltage startup circuit, with ultra-low standby power consumption.

Yutai Semiconductor Co., Ltd.

Yutai has launched two co-packaged GaN fast charging source chips ETA80G20 and ETA80G25, which can be used for 20W fast charging source design and 25W fast charging source design respectively.

Yutai Semiconductor ETA80G25 adopts SSOP10 package, built-in 650V withstand voltage, 850mΩ D-mode gallium nitride switch. The drain of the internal switch tube is connected to a large area of copper foil for heat dissipation, which can achieve good heat dissipation and meet the requirements of insulation and withstand voltage.

ETA80G25 supports 90-264V input and 27W power output. The chip supports CCM/QR/DCM operation mode, with a maximum switching frequency of 80kHz under full load, and supports frequency foldback control under light load, which can achieve high efficiency in the full power range.

Shenzhen Lishengmei Semiconductor Co., Ltd.

Lishengmei has launched a total of four co-packaged gallium nitride power supply chips, two of which are suitable for 30W gallium nitride fast charging design, and the other two chips are suitable for 45W gallium nitride fast charging power supply design.

The LN9T28xF is a high-performance, highly integrated current-mode PWM controller that integrates 700V GaN power devices, making it easy to build low-standby, low-cost, high-performance solutions to meet CoC V5 in applications and DoE VI energy efficiency.

The chip PWM switching frequency is set internally by the chip, with full temperature compensation, and the maximum value is set to 130kHz. Under no-load or light-load conditions, the IC can operate in a smart interrupt mode to reduce switching losses, resulting in good conversion efficiency with lower standby power consumption.

Low VDD start-up current and operating current allow the LN9T28xF to have very high reliability and longevity. A resistor with a larger resistance value can be used to complete the startup of the circuit, which also reduces the loss of the startup resistor and further reduces the standby power consumption of the system. The LN9T28xF also provides a very comprehensive auto-recovery protection circuit, including cycle-by-cycle current limit (0CP), output overload protection (OLP) with high and low voltage compensation, VDD overvoltage clamp and undervoltage lockout (UVLO).

Shanghai Xisu Microelectronics Technology Co., Ltd.

As a third-generation semiconductor company, Xisuwei has launched four co-packaged GaN chips in addition to GaN power devices, which can be used for the design and development of 45W, 65W, and 120W GaN fast charging chargers. .

Xisu Microelectronics GaNcore series products are a high-performance and high-reliability current-controlled PWM switch-controlled gallium nitride power chip. It only needs +11V unregulated power input, and the standby power consumption in the full voltage range is less than 65mW, which meets the six-level Energy efficiency standard, and supports QR/CCM mixed mode, chip withstand voltage 650V, junction temperature 220 degrees, proprietary technology reduces GaNFET switching loss, improves product efficiency and power density, and improves product EMI.

The TSP65015Q8, TSP65016Q8, TSP65025Q8, and TSP65005Q8 in the GaNcore series integrate a variety of working modes. Under heavy load, when the system operating frequency is 130KHz PWM mode, it will enter CCM mode when low-voltage input; under heavy load, the system will work In QR mode, and adopts proprietary technology to reduce switching loss, while combined with PFM operating mode to improve system efficiency. Designers achieve higher levels of power density and efficiency in power electronic systems such as fast charging (PD).

Suzhou Meisidisai Semiconductor Technology Co., Ltd.

For the application of high-integrated fast charging power sources, Mess Semiconductor has launched the SimpleGaN series of co-packaged gallium nitride chips MSG7511x. This series of gallium nitride chips includes 5 chips, which can cope with the development of fast charging power sources within 45W, of which MSG75110 supports the largest 22W output power, MSG75111 supports up to 25W power, MSG75112 supports up to 27W power, MSG75113 supports up to 33W power, and MSG75115 supports up to 45W power.

Meis Semiconductor MSG7511x belongs to the SimpleGaN series, which is a high-performance AC-DC power controller with a highly integrated quasi-resonant (QR) controller, GaN power devices and other devices for building a peak current mode PWM flyback Mode power supplies optimized for high performance, low EMl, low standby power consumption and many key built-in protection features. It achieves strict multi-stage constant voltage and multi-stage constant current regulation without traditional secondary feedback circuits and without loop compensation components, while maintaining stability under all operating conditions.

The Smarttop series is optimized to work with the secondary side controller of QC3.0 technology for fast and smooth voltage transitions according to mobile phone requirements. When paired with the MX691X, it is compatible with the MediaTek (MTK) PE2.0 plus charging protocol, eliminating the need for secondary side controllers Smarttop series provides comprehensive protection coverage with automatic recovery features including cycle-by-cycle current limiting, different output voltage levels over voltage protection, feedback loop open circuit protection, short circuit protection, built-in leading edge blanking, VDD under voltage lockout (UVLO), over temperature protection, etc.

Power Integrations

In response to the application needs of the consumer fast charging power supply market, PI has launched a number of series of gallium nitride power chips. There are two types of quasi-resonant flyback QR architecture and active clamp ACF architecture, and the corresponding output power is also different. Power supply manufacturers can choose according to actual needs.

Among them, the InnoSwitch3-CP series includes 5 GaN power chips, all of which are designed with QR architecture, which can meet the design requirements of 55W-75W USB PD fast charging power source. The InnoSwitch3-Pro series includes three chips. Compared with the CP series, the Pro series also supports PPS fast-charging applications.

PI SC1933C belongs to the PI PowiGaN series, which is the first GaN power supply product launched by PI, marking the full application of GaN components in USB PD fast charging sources. Volume and weight, more convenient to carry.

PI SC1933C can provide accurate constant voltage/constant current/constant power without external components, and can easily work with external fast charging protocol interface IC, so it is suitable for high-efficiency flyback design, built-in synchronous rectification controller and feedback, more Save on external components.

SC1936C chip and SC1933C belong to the same series, both are PI’s first PowiGaN main control chip with built-in GaN power device, built-in controller, GaN power device, synchronous rectifier controller, etc. Under a wide voltage range, in the adapter shell Maximum 75W continuous power.

PI INN3278 is a gallium nitride main control chip, which integrates a primary switch, a synchronous rectifier controller, a quasi-resonant flyback power supply IC with feedback and constant power characteristics. Its internal integrated 750V PowiGaN switch tube supports output of 55W power in a wide voltage range in a closed environment.

PI INN3279C has a built-in 750V GaN power device, and the wide voltage input can output 65W in a closed environment of the adapter. The chip integrates a quasi-resonant flyback controller and an integrated main switch, a synchronous rectifier controller and built-in feedback, and constant power output.

PI INN3370C belongs to the InnoSwitch3-Pro family. It is a digitally controlled constant voltage/constant current off-line flyback quasi-resonant switch IC that integrates high-voltage switching, synchronous rectification and FluxLink feedback functions. INN3370C uses PowiGaN technology and has a built-in 750V withstand voltage GaN switch. , maximum support 100W output, while I2C data transmission dynamic high-precision control, INN3370C also built-in one 3.6V output to supply power for external protocol IC.

PI INN3378C adopts PowiGaN technology and belongs to the InnoSwitch3-Pro family. It has a built-in PWM controller, high-voltage gallium nitride power device, synchronous rectifier controller, etc., with a very high level of integration, and uses digital bus to control voltage regulation. Under the condition of a wide voltage range, 55W power can be output in the airtight case.

PI INN3379C adopts PowiGaN technology and belongs to the InnoSwitch3-Pro family. It has a built-in PWM controller, high-voltage gallium nitride power device, synchronous rectifier controller, etc., with a very high level of integration, and adopts digital bus to control voltage regulation. Under the condition of a wide voltage range, 65W power can be output in the airtight case.

INN4075C is PI’s new generation of InnoSwitch4 series chips using PowiGaN technology. It is applied to the active clamp flyback architecture, which can realize zero-voltage switching of the main switch tube and reduce the temperature rise of the device. At the same time, the EMI performance is optimized, which is very suitable for the design of switching power supply with small size and high operating frequency.

InnoSwitch4-CZ is an integrated flyback chip for zero-voltage switching. It integrates a 750V high-voltage PowiGaN switch, active clamp drive, synchronous rectification and FluxLink feedback. It is used in conjunction with the ClampZero active clamp chip to recover leakage inductance energy. Up to 95% conversion efficiency.

At the same time, its standby power consumption is less than 30mW, built-in synchronous rectifier gate open circuit detection, supports fast input under-voltage/over-voltage protection, and has complete and comprehensive protection functions. It is suitable for high power density flyback design, high energy efficiency USB PD charger and high energy efficiency constant voltage and constant current charger, etc.

The PI CPZ1062M is a highly integrated device that reduces switching losses in the InnoSwitch4 main switch, captures and recovers transformer leakage inductance energy, and significantly improves energy efficiency. PI’s ClampZero series products integrate high-voltage switches and controllers, which can be seamlessly connected to the InnoSwitch4 main controller to realize a flexible active clamp flyback scheme.

Shenzhen Gaobo Microelectronics Technology Co., Ltd.

Universal Semiconductor has launched the co-packaged GaN chip G1635x series for the application of highly integrated gallium nitride fast charging. This series of gallium nitride chips contains a total of three chips, of which G1635A is suitable for 30W PD fast charging design, G1635B supports 45W PD Fast charging design, G1635C is suitable for 65W PD fast charging design.

Universal’s G1635x series are high-frequency quasi-resonant flyback PWM controllers (QR/DCM) with GaN direct drivers and built-in high-voltage GaN switches. The G1635x family offers adaptive switching frequency foldback for higher efficiency over the entire load range. It operates QR and DCM through valley switching to achieve high efficiency, and when no load, the IC will work in Burst mode to reduce power consumption, so low standby power consumption can be obtained.

At the same time, this series of chips also provide a complete protection range, including cycle-by-cycle current limit (OCP), over-temperature protection (OTP), output short-circuit, output and VDD over-voltage protection. Excellent EMI performance is achieved through a proprietary frequency shuffling technique.

Shaanxi Xiacheng Microelectronics Co., Ltd.

Yacheng Micro is committed to providing customers with high reliability and high power density fast-charging solutions. At present, it has launched four co-packaged GaN power chips, namely RM6820NQ/NQL which can support maximum 120W output power and 36W output power. power of the RM6604ND/NDL.

Yacheng Micro RM6820NQ/NQL is a GaN power integrated power chip that integrates ZVS flyback switching power supply controller, 650V GaN FET, GaN driver, driver protection and high voltage startup, supports up to 120W fast charge, full voltage The standby power consumption within the range is less than 65mW, which meets the six-level energy efficiency standard. Proprietary ZVS technology reduces GaNFET switching losses, increases product efficiency and power density, and improves product EMI. It has the characteristics of small size, high efficiency, high performance, low power consumption, etc., and realizes the design requirements of high reliability, high efficiency and high integration of miniaturized high power fast charging source.

Yacheng Micro RM6820NQ/NQL integrates multiple working modes. Under heavy load, the system works under the traditional fixed frequency 130Khz/85Khz PWM mode, and will enter CCM mode under low voltage input; under heavy load The system works in the QR mode and adopts the proprietary ZVS technology to reduce the switching loss and improve the system efficiency in combination with the PFM working mode.

RM6820NQ/NQL adopts proprietary driving technology, with high-voltage GaNFET power devices to improve EMI design; under light load or no-load conditions, the system works in Burst Mode mode, which effectively removes audio noise, and at the same time in this mode , RM6820NQ/NQL itself has extremely low loss, so it can achieve ultra-low standby power consumption. In any mode, a unique frequency jittering mode of operation is integrated to improve EMI.

RM6820NQ/NQL integrates multiple protection modes and compensation circuits at the same time, including VCC OVP, built-in OTP, external OVP, voltage lockout (uvlo), cycle-by-cycle overcurrent protection OCP, overload protection (OLP), CS short circuit protection, output Schottky short-circuit protection, etc., and built-in slope compensation and ZVS line voltage compensation.

Yacheng Micro RM6604ND/NDL is a GaN power integrated power chip that integrates CCM/QR flyback switching power supply controller, 650V GaN FET, GaN driver, driver protection and high voltage startup, supports up to 36W fast charging, The standby power consumption in the full voltage range is less than 65mW, which meets the six-level energy efficiency standard. In addition, the chip adopts DFN5*6 package, and the cost is more excellent.

Yacheng Micro RM6604ND/NDL integrates multiple working modes. Under heavy load, the system works in the traditional fixed frequency 130Khz/85KHz PWM mode, and it will enter CCM mode under low voltage input; under heavy load, the system works In QR mode, the switching loss is reduced, and the system efficiency is improved in combination with the PFM mode.

RM6604ND/NDL adopts proprietary driving technology, with high-voltage GaNFET power devices to improve EMI design; under light load or no-load conditions, the system works in BurstMode mode, which effectively removes audio noise, while in this mode, RM6604ND/NDL itself loses power Extremely low, so ultra-low standby power consumption can be achieved. In any mode, a unique frequency jittering mode of operation is integrated to improve EMI.

RM6604ND/NDL integrates multiple protection modes and compensation circuits at the same time, including VCCOVP, built-in OTP, external OVP, under-voltage lockout (uvlo) cycle-by-cycle overcurrent protection OCP, overload protection (OLP), CS short circuit protection, output Schott Base short-circuit protection, etc., and built-in slope compensation.

Huayuan Zhixin Semiconductor (Shenzhen) Co., Ltd.

Huayuan Semiconductor owns three co-packaged GaN power chips HYC3602E, HYC3602H and HYC3655. Among them, HYC3602E and HYC3602H are suitable for 30W GaN fast application, and HYC3655 is suitable for 65W GaN fast charging design. Reference Design.

Huayuan Semiconductor’s co-packaged gallium nitride chip HYC3602E adopts ESOP-8 package, which takes into account cost and heat dissipation, and has built-in gallium nitride to meet market demand; at 90Vac output, full load efficiency ≥ 91.5%, 230Vac full load efficiency ≥ 93%, and at the same time The chip also has various protection functions such as LPS and OTP.

Huayuan Semiconductor HYC3655 is a GaN co-packaged chip in DFN8 package. It adopts intelligent digital multi-mode control, supports peak current control mode, operates in CCM mode under heavy load, integrates high-voltage GaN switch tube, and has an overload protection period of 56mS. Frequency jittering is supported to improve EMI performance, and adaptive gate drivers can balance switching losses and EMI.

HYC3655 integrates a 650V withstand voltage, 165mΩ resistance gallium nitride switch, and the switching frequency is 89KHz. Support output overvoltage protection, support transformer magnetic saturation protection, support chip power supply overvoltage protection, support overload protection, support output voltage overvoltage protection, support on-chip overheating protection, support current sampling resistor open circuit protection, standby power consumption is less than 75mW, with Low startup current.

Shenzhen Chuangxin Microelectronics Co., Ltd.

Chuangxinwei has launched a co-packaged gallium nitride chip, which is suitable for the design and development of a maximum 30W fast charging power source system.

Chuangxinwei CM1775 is a high-frequency QR-controlled high-performance AC-DC power converter with built-in E-mode GaN, which can be used for PD fast charging power products within 30W. CM1775 can work according to different control systems of input voltage, output voltage and load QR, valley-turned DCM, and Burst mode to achieve the full voltage range and the best efficiency in the full load segment.

Chuangxinwei CM1775 supports an ultra-wide VDD operating voltage range (7~100V) to meet the ultra-wide output voltage range (3.3~20V) of PD/PPS, without any external voltage regulator power supply device. The core CM1775 has built-in a large number of compensation and protection functions, such as input voltage compensation, inductance compensation, over-current protection, overload protection, VDD over-voltage protection, over-temperature protection, etc., which simplifies the peripheral circuit, facilitates PCB layout and EMI design, and improves The reliability and security of the program are improved, and the program cost is reduced.

The large-scale commercial use of gallium nitride technology in consumer power products has optimized the efficiency of chargers, greatly reduced the volume, and improved portability, which is favored by consumers. At present, major mobile phone and notebook brands have entered the market. The gallium nitride fast charging market, coupled with the support of the national 14th Five-Year Plan for the third-generation semiconductor technology, has a very promising market prospect for gallium nitride fast charging.

With the emergence of co-packaged gallium nitride chips, one chip completes the functions that previously required three chips to achieve, fundamentally solves the control and driving problems of gallium nitride power devices, and simplifies the design of fast charging sources. And reduce the cost of power supply manufacturers. It can be seen from the summary statistics that 14 power chip manufacturers will bring 50 co-packaged gallium nitride chips, which can meet the design of power supply products in the power range of 20W-120W.

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